Investigation of Hole-Tunneling Current Through Ultrathin Oxynitride/Oxide Stack Gate Dielectrics in P-Mosfets

By: Material type: ArticleArticleDescription: 1158-1164 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.49, No.07 (Jul. 2002) Available

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