Investigation of Hole-Tunneling Current Through Ultrathin Oxynitride/Oxide Stack Gate Dielectrics in P-Mosfets (Record no. 772295)

MARC details
000 -LEADER
fixed length control field 00603nab a2200181Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2002 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Yu, H. Y
9 (RLIN) 821569
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Hou, Y.-T
9 (RLIN) 799443
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Li, M.-F
9 (RLIN) 768168
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Kwong, D.-L
9 (RLIN) 821570
245 #0 - TITLE STATEMENT
Title Investigation of Hole-Tunneling Current Through Ultrathin Oxynitride/Oxide Stack Gate Dielectrics in P-Mosfets
300 ## - PHYSICAL DESCRIPTION
Extent 1158-1164 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Hole Tunneling Current
9 (RLIN) 821571
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Mosfet
9 (RLIN) 720139
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element No Stack
9 (RLIN) 821573
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2002
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.49, No.07 (Jul. 2002)   19/08/2023 Articles
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