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		Influence of Surface Defect Charge At Algan- Gan-Hemt Upon Schottky Gate Leakage Current and Breakdown Voltage by Saito, Waturu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Design Optimization of High Breakdown Voltage Aigan-Gan Power Hemt on An Insulating Substrate for Ron A-Vb Tradeoff Characteristics by Saito, Waturu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Low on-Resistance Schottky-Barrier Diode with P-Buried Floating Layer Structure by Saito, Waturu Omura, Ichiro Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High Breakdown Voltage Undoped Algan-Gan Power Hemt on Sapphire Substrate and Its Demonstration for Dc-Dc Converter Application by Saito, Waturu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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