High Breakdown Voltage Undoped Algan-Gan Power Hemt on Sapphire Substrate and Its Demonstration for Dc-Dc Converter Application

By: Material type: ArticleArticleDescription: 1913-1917 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.51, No.11 (Nov. 2004) Available

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