High Breakdown Voltage Undoped Algan-Gan Power Hemt on Sapphire Substrate and Its Demonstration for Dc-Dc Converter Application (Record no. 756800)

MARC details
000 -LEADER
fixed length control field 00472nab a2200121Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2004 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Saito, Waturu
9 (RLIN) 791606
245 #0 - TITLE STATEMENT
Title High Breakdown Voltage Undoped Algan-Gan Power Hemt on Sapphire Substrate and Its Demonstration for Dc-Dc Converter Application
300 ## - PHYSICAL DESCRIPTION
Extent 1913-1917 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Solid-State Power and High Voltage
9 (RLIN) 797047
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2004
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.51, No.11 (Nov. 2004)   19/08/2023 Articles
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