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		Band-Gap Narrowing and High-Frequency Characteristics of Si/Gexsi -Heterojunction Bipolar Transistors Formed by Ge Ion Ion Implantation in Si by liu, Shau-Shen Jang, Sheng-Lyang Chyau, Chwan-GWO Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Compact Ldd Nmosfet Degradation Model by lin, Shau-Shen Jang, Sheng-Lyang Chyau, Chwan-GWO Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Compact Pre-and Post-Stress I-V Model for Submicrometer Buried-Channel Pmosfet'S by Chyau, Chwan-GWO Jang, Sheng-Lyang Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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