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		Highly Effective Junction Isolation Structures for Power Ics Based on Standard Cmos Process by Starke, T K H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Design Optimization of High Breakdown Voltage Aigan-Gan Power Hemt on An Insulating Substrate for Ron A-Vb Tradeoff Characteristics by Saito, Waturu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Design and Fabrication of Resurf Mosfets on 4h-Sic(0001). and 6h-(0001) by Kimoto, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High Breakdown Voltage Undoped Algan-Gan Power Hemt on Sapphire Substrate and Its Demonstration for Dc-Dc Converter Application by Saito, Waturu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Large Area, Ultra-High Voltage 4h-Sic P-I-N- Rectifiers by Singh, R Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Low-Loss, High-Voltage 6h-Sic Epitaxial P-I-N Diode by Tamura, S Kimoto, A Matsunami, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Experimental Investigation onNature of Reverse Current of Silicon Power Pn-Junctions by Obreja, V. N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Microthyristor Could Be Promising Microelectronics Device by Zekry, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Status and Prospects for Sic Power Mosfets by Cooper, J A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fast-Switching and Shallow Saturation Bipolar Power Transistors Using Corrugated Base Junctions by Park, C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Generalized Image Method with Application toThermal Modeling of Poewr Devices and Circuits by Rinaldi, N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Experimental Comparison of Rf Power Ldmosfets on Thin-Film Soi and Bulk Silicon by Fiorenza, J G Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effects of Wave Function Penetration IntoGate-Oxide on Self-Consistent Modeling of Scaled Mosfets by Kauser, M Z Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Determination of Deep Ultrathin Equivalent Oxide Thickness (Eot) from Measuring Flat-Band C-V Curve by Chen, C.-H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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