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		Recoiled-Oxygen-Free Processing for 1.5 Nm Sion Gate-Dielectric in Sub-100-Nm Cmos Technology by togo, M Kimura, S Mogami, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Properties of 1.5nm Sion Gate-Dielectric Using Radical Oxygen and Radical Nitrogen by togo, M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		ImprovingQuality of Sub 1.5-Nm-Thick Oxynitride Gate Dielectric for Fets with Narrow Channel and Shallow-Trench Isolation Using Radical Oxygen and Nitrogen by togo, M Watanabe, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Oxynitridation Using Radical-Oxygen and -Nitrogen for High-Performance and Highly Reliable N/P Fets by togo, M Watanabe, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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