Your search returned 2 results.

Results
		Influences of Buried-Oxide Interface on Inversion-Layer Mobility in Ultrathin Soi Mosfets by Koga, J Takagi, S.-I toriumi, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Suppression of Stress-Induced Leakage Current after Fowler-Nordheim Stressing By Deuterium Pyrogenic Oxidation and Deuterated Poly-Si Deposition by Mitani, Y Satake, H Itoh, H toriumi, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

Refine your search