Influences of Buried-Oxide Interface on Inversion-Layer Mobility in Ultrathin Soi Mosfets

By: Material type: ArticleArticleDescription: 1042-1048 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.49, No.06 (Jun. 2002) Available

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