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		Rapid Thermal Postoxidation Anneal Engineering in Thin Gate Oxides with Al Gates by Chen, Chih-Yao Hwu, Jenn-GWO Jeng, Ming-Jer Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Characterization and Process Control of Cost-Effective High-K Aluminum Oxide Gate Dielectrics Prepared By Anodization Followed By Furnace Annealing by Huang, Szu-Wei Hwu, Jenn-Gwo Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effect of Oxidation Pressure onCharacteristics of Fluorinated Thin Gate Oxides Prepared By Room Temperature Deposition Followed By Rapid Thermal Oxidation by Yeh, Kuo-Lang Jeng, Ming-Jer Hwu, Jenn-Gwo Source: Proceedings ofNational Science Council, Republic of China Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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