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A Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet by
  • Cheng, Zhi-Uuan
  • ling, C. H
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Fuliy Depleted Cmos/Soi Device Design Guidelines for Low-Power Applications by
  • Banna, Srinivasa R
  • Chan, Philip C. H
  • Chan, Mansun
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Thin Silicide Development for Fuliy-Depleted Soi Cmos Technology by
  • liu, Harvey I
  • Burns, James A
  • Wyatt, Peter W
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Unified Understanding on Fuliy-Depleted Soi Nmosfet Hot-Carrier Degradation by
  • Banna, Srinivasa R
  • Chan, Philip C. H
  • Fung, Samuel K. H
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
SuppressingParasitic Bipolar Action in Fuliy-Depleted Mosfet''S/Simox by Using Back-Side Bias-Temperature Treatment by
  • Koizumi, H
  • Tsuchiya, Toshiaki
  • Shimaya, Maskazu
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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