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		Sodel Fet: Novelchannel and Source/Drain Profile Engineering Schemes By Selective Si Epitaxial Growth Technology by Inaba, S Miyano, Shinji Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High Performance 35 Nm Gate Length Cmos with No Oxynitride Gate Dielectric and Ni Salicide by Inaba, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Threshold Voltage Roll-Up/Roll-off Characteristic Control in Sub-0.2-Um Single Workfunction Gate Cmos for High-Performance Dram Applications by Inaba, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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