High Performance 35 Nm Gate Length Cmos with No Oxynitride Gate Dielectric and Ni Salicide

By: Material type: ArticleArticleDescription: 2263-2270 pSubject(s): In: Ieee Transactions on Electron Devices
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.49, No.12 (Dec. 2002) Available

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