Downscaling Limit of Equivqlent Oxide Thickness in for mation of Ultrathin Gate Dielectric By Thermal-Enhanced Remote Plasmanitridation

By: Material type: ArticleArticleDescription: 840-846 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.49, No.05 (May. 2002) Available

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