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Downscaling Limit of Equivqlent Oxide Thickness in for mation of Ultrathin Gate Dielectric By Thermal-Enhanced Remote Plasmanitridation

Chen, C.-H.

Downscaling Limit of Equivqlent Oxide Thickness in for mation of Ultrathin Gate Dielectric By Thermal-Enhanced Remote Plasmanitridation - 840-846 p.

Subjects--Topical Terms:
Radical-Induced Re-Oxidation

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