Gate Dielectrics for Si, Sic, and Gan As Synthesized By Jet Vapor Deposition

By: Material type: ArticleArticleDescription: 36.-370 pSubject(s): In: Microelectronics Journal
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Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.34, No.5-8 (May. 2003) Available

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