Gate Dielectrics for Si, Sic, and Gan As Synthesized By Jet Vapor Deposition (Record no. 763316)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 00381nab a2200121Ia 4500 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 230808s2003 |||||||f |||| 00| 0 eng d |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Ma, T.P |
| 9 (RLIN) | 779073 |
| 245 #0 - TITLE STATEMENT | |
| Title | Gate Dielectrics for Si, Sic, and Gan As Synthesized By Jet Vapor Deposition |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 36.-370 p. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Gate Dielectric |
| 9 (RLIN) | 806467 |
| 773 ## - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | 2003 |
| Title | Microelectronics Journal |
| International Standard Serial Number | 00262692 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | Articles |
| -- | 51 |
| -- | ABUL KALAM Library |
| Not for loan | Home library | Serial Enumeration / chronology | Total Checkouts | Date last seen | Koha item type |
|---|---|---|---|---|---|
| Engr Abul Kalam Library | Vol.34, No.5-8 (May. 2003) | 19/08/2023 | Articles |