High-Al2o3 Gate Dielectrics Prepared By Oxidation of Aluminium Film in Nitric Acid Followed By High-Temperature Annealing

By: Material type: ArticleArticleDescription: 854-858 pSubject(s): In: Ieee Transactions on Electron Devices
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.51, No.06 (Jun. 2004) Available

Visit counter For Websites

Copyright © 
Engr Abul Kalam Library, NEDUET, 2024