High-Al2o3 Gate Dielectrics Prepared By Oxidation of Aluminium Film in Nitric Acid Followed By High-Temperature Annealing (Record no. 760770)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 00566nab a2200157Ia 4500 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 230808s2004 |||||||f |||| 00| 0 eng d |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Kuo, Chih-Sheng |
| 9 (RLIN) | 807511 |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Hsu, Jui-Feng. |
| 9 (RLIN) | 807513 |
| 245 #0 - TITLE STATEMENT | |
| Title | High-Al2o3 Gate Dielectrics Prepared By Oxidation of Aluminium Film in Nitric Acid Followed By High-Temperature Annealing |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 854-858 p. |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | High-K Gate Dielectric |
| 9 (RLIN) | 807514 |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Mos Capacitors |
| 9 (RLIN) | 777962 |
| 650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Nitric Acid |
| 9 (RLIN) | 807515 |
| 773 ## - HOST ITEM ENTRY | |
| Place, publisher, and date of publication | 2004 |
| Title | Ieee Transactions on Electron Devices |
| International Standard Serial Number | 00189383 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | Articles |
| -- | 51 |
| -- | ABUL KALAM Library |
| Not for loan | Home library | Serial Enumeration / chronology | Total Checkouts | Date last seen | Koha item type |
|---|---|---|---|---|---|
| Engr Abul Kalam Library | Vol.51, No.06 (Jun. 2004) | 19/08/2023 | Articles |