30-Nm Two-Step Recess Gate Inp-Based Inalas/Ingaas Hemts (Record no. 773461)

MARC details
000 -LEADER
fixed length control field 00463nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2002 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Suemitsu, T.
9 (RLIN) 777018
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Yokoyama, Y
9 (RLIN) 810709
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Ishii, T
9 (RLIN) 799450
245 #0 - TITLE STATEMENT
Title 30-Nm Two-Step Recess Gate Inp-Based Inalas/Ingaas Hemts
300 ## - PHYSICAL DESCRIPTION
Extent 1694-1700 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Compound Semiconductor Devices
9 (RLIN) 756188
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2002
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.49, No.10 (Oct. 2002)   19/08/2023 Articles
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