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30-Nm Two-Step Recess Gate Inp-Based Inalas/Ingaas Hemts

Suemitsu, T. Yokoyama, Y Ishii, T

30-Nm Two-Step Recess Gate Inp-Based Inalas/Ingaas Hemts - 1694-1700 p.

Subjects--Topical Terms:
Compound Semiconductor Devices

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