Lsser Thermal Processing of Amphous Silicon Gates to Reduce Poly-Depletion in Cmos Devices (Record no. 756815)

MARC details
000 -LEADER
fixed length control field 00497nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2004 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Chong, Yung Fu
9 (RLIN) 801897
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Gossmann, Hans-Joachim
9 (RLIN) 801898
245 #0 - TITLE STATEMENT
Title Lsser Thermal Processing of Amphous Silicon Gates to Reduce Poly-Depletion in Cmos Devices
300 ## - PHYSICAL DESCRIPTION
Extent 669-676 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Boron Penetration
9 (RLIN) 777741
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Gate Oxide
9 (RLIN) 777258
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2004
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.51, No.05 (May. 2004)   19/08/2023 Articles
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