A Physical Model for Threshold Voltage Instability in Si3n4-Gate H -Sensitive Fet'S (Ph Isfet'S) (Record no. 744216)

MARC details
000 -LEADER
fixed length control field 00556nab a2200169Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s1998 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Jamasb, Shahriar
9 (RLIN) 778122
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Colilns, S.
9 (RLIN) 778123
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Smith, Rosemary L.
9 (RLIN) 778125
245 #2 - TITLE STATEMENT
Title A Physical Model for Threshold Voltage Instability in Si3n4-Gate H -Sensitive Fet'S (Ph Isfet'S)
300 ## - PHYSICAL DESCRIPTION
Extent 1239-1245 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Drift
9 (RLIN) 169791
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Hydration
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Instability
9 (RLIN) 724802
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 1998
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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  Engr Abul Kalam Library Vol.45, No.06 (Jun. 1998)   19/08/2023 Articles