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A Physical Model for Threshold Voltage Instability in Si3n4-Gate H -Sensitive Fet'S (Ph Isfet'S)

Jamasb, Shahriar Colilns, S. Smith, Rosemary L.

A Physical Model for Threshold Voltage Instability in Si3n4-Gate H -Sensitive Fet'S (Ph Isfet'S) - 1239-1245 p.

Subjects--Topical Terms:
Drift
Hydration
Instability

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