A Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet (Record no. 741694)

MARC details
000 -LEADER
fixed length control field 00575nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2000 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Cheng, Zhi-Uuan
9 (RLIN) 771952
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name ling, C. H.
9 (RLIN) 771953
245 #2 - TITLE STATEMENT
Title A Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet
300 ## - PHYSICAL DESCRIPTION
Extent 97-102 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Carrier Generation lifetime
9 (RLIN) 771954
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Fuliy-Depleted Soi Mosfet
9 (RLIN) 771955
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Recombination lifetime
9 (RLIN) 771956
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2000
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.47, No.01 (Jan. 2000)   19/08/2023 Articles
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