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A Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet

Cheng, Zhi-Uuan ling, C. H.

A Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet - 97-102 p.

Subjects--Topical Terms:
Carrier Generation lifetime
Fuliy-Depleted Soi Mosfet
Recombination lifetime

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