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A Compact Pre-and Post-Stress I-V Model for Submicrometer Buried-Channel Pmosfet'S

Chyau, Chwan-GWO Jang, Sheng-Lyang

A Compact Pre-and Post-Stress I-V Model for Submicrometer Buried-Channel Pmosfet'S - 2167-2178 p.

Subjects--Topical Terms:
Bc Mosfet'S
Bidirectional Model
Hot-Carrier-Induced Degradation

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