000 00435nab a2200145Ia 4500
008 230808s1998 |||||||f |||| 00| 0 eng d
100 _aVenkataraghavan, P
_9849520
100 _aBaliga, B. J
_9780829
245 4 _aThe Dv/Dt Capability of Mos-Gated Thyistors.
300 _a660-666 p.
650 _aMos Gate
_9819123
650 _aSwithcing
_9819437
773 _d1998
_tIeee Transactions on PowerElectronics
_x08858993
942 _cART
_o51
_pABUL KALAM Library
999 _c791892
_d791892