000			00492nab a2200133Ia 4500
008			230808s2002 |||||||f |||| 00| 0 eng d
100			_aChung, Y. _9820220
245		0	_aExperimenytal 128-Kbit Ferroelkectric Memory with 10 Endurance and 10-Year Data Retention
300			_a129-135 p.
650			_aCell Array Architecture _9817903
650			_aUp-Down Pulsed Plate Read/Write -Back Scheme _9820221
773			_d2002 _tIee Proceedings:Circuits, Devices and Systems _x13502409
942			_cART _o51 _pABUL KALAM Library
999			_c771186 _d771186