| 000 | 00566nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aKuo, Chih-Sheng _9807511 |
||
| 100 |
_aHsu, Jui-Feng. _9807513 |
||
| 245 | 0 | _aHigh-Al2o3 Gate Dielectrics Prepared By Oxidation of Aluminium Film in Nitric Acid Followed By High-Temperature Annealing | |
| 300 | _a854-858 p. | ||
| 650 |
_aHigh-K Gate Dielectric _9807514 |
||
| 650 |
_aMos Capacitors _9777962 |
||
| 650 |
_aNitric Acid _9807515 |
||
| 773 |
_d2004 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c760770 _d760770 |
||