000 | 00515nab a2200145Ia 4500 | ||
---|---|---|---|
008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
100 |
_aLiu, Dheng-Da _9806653 |
||
245 | 0 | _aLarge Grain Poly-Si (-10um) Tfts Prepared By Excimer Laser Aneealing Through A Thick Sion Absorption Layer | |
300 | _a166-171 p. | ||
650 |
_aExcimer Laser Annealing _9780646 |
||
650 |
_aPoly-Si Tft _9777397 |
||
650 |
_aThin - Film Devices _9235439 |
||
773 |
_d2004 _tIeee Journal of Solid-State Circuits _x00189200 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c760099 _d760099 |