| 000 | 00623nab a2200169Ia 4500 | ||
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| 008 | 230808s2003 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aLallement, Christophe _9805708 |
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| 100 |
_aFazan, Pierre C _9805710 |
||
| 100 |
_aBucher, Matthias _9805711 |
||
| 245 | 0 | _aAccounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in A Charge-Based Design-Oriented Mosfet Model | |
| 300 | _a406-417 p. | ||
| 650 |
_aQuantum Effect _9703060 |
||
| 650 |
_aCharges Modeling _9805712 |
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| 650 |
_aMosfet Model _9805714 |
||
| 773 |
_d2003 _tIeee Transactions on Electron Devices _x00189383 |
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| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c759376 _d759376 |
||