| 000 | 00524nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2003 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aShi, Yun _9805670 |
||
| 100 | _aCressler, John D | ||
| 100 |
_aNiu, Guofu _9769381 |
||
| 245 | 0 | _aonConsistent Modeling of Band-Gap Narrowing for Accurate Device-Level Simulation of Scaled Sige Hbts | |
| 300 | _a1370-1377 p. | ||
| 650 |
_aDevice Simulation _9771962 |
||
| 650 |
_aSige Hbt _9768862 |
||
| 773 |
_d2003 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c759355 _d759355 |
||