000 | 00428nab a2200121Ia 4500 | ||
---|---|---|---|
008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
100 |
_aXiong, Shiying _9797111 |
||
245 | 2 | _aA Simulation Study of Gate Iine Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices | |
300 | _a228-232 p. | ||
650 |
_aDoping Profiles _9779472 |
||
773 |
_d2004 _tIeee Transactions on Electron Devices _x00189383 |
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942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c757741 _d757741 |