000 00428nab a2200121Ia 4500
008 230808s2004 |||||||f |||| 00| 0 eng d
100 _aXiong, Shiying
_9797111
245 2 _aA Simulation Study of Gate Iine Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices
300 _a228-232 p.
650 _aDoping Profiles
_9779472
773 _d2004
_tIeee Transactions on Electron Devices
_x00189383
942 _cART
_o51
_pABUL KALAM Library
999 _c757741
_d757741