000 | 00503nab a2200145Ia 4500 | ||
---|---|---|---|
008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
100 |
_aXiong, Shiying _9797111 |
||
100 |
_aBoker, Jeff _9803373 |
||
245 | 2 | _aA Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices | |
300 | _a228-232 p. | ||
650 |
_aDoping _9725227 |
||
650 |
_aGate Line Edge Roughness _9803374 |
||
773 |
_d2004 _tIeee Journal of Solid-State Circuits _x00189200 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c757686 _d757686 |