000 00498nab a2200157Ia 4500
008 230808s2004 |||||||f |||| 00| 0 eng d
100 _aCheng, C
_9787205
100 _aLeung, M.C.
_9801911
245 0 _aModeling of Large-Grain Polysilicon for mation Under Retardation Effect of Spc
300 _a2205-2210 p.
650 _aCrystallization
650 _aLarge-Grain
_9801912
650 _aPolysilicon
_9768183
773 _d2004
_tIeee Transactions on Electron Devices
_x00189383
942 _cART
_o51
_pABUL KALAM Library
999 _c756827
_d756827