000 | 00498nab a2200157Ia 4500 | ||
---|---|---|---|
008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
100 |
_aCheng, C _9787205 |
||
100 |
_aLeung, M.C. _9801911 |
||
245 | 0 | _aModeling of Large-Grain Polysilicon for mation Under Retardation Effect of Spc | |
300 | _a2205-2210 p. | ||
650 | _aCrystallization | ||
650 |
_aLarge-Grain _9801912 |
||
650 |
_aPolysilicon _9768183 |
||
773 |
_d2004 _tIeee Transactions on Electron Devices _x00189383 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c756827 _d756827 |