| 000 | 00497nab a2200145Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2004 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aChong, Yung Fu _9801897 |
||
| 100 |
_aGossmann, Hans-Joachim _9801898 |
||
| 245 | 0 | _aLsser Thermal Processing of Amphous Silicon Gates to Reduce Poly-Depletion in Cmos Devices | |
| 300 | _a669-676 p. | ||
| 650 |
_aBoron Penetration _9777741 |
||
| 650 |
_aGate Oxide _9777258 |
||
| 773 |
_d2004 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c756815 _d756815 |
||