000 00574nab a2200169Ia 4500
008 230808s2000 |||||||f |||| 00| 0 eng d
100 _aSatoh, Yuhki
_9781074
100 _aShiota, Takaaki
_9781075
100 _aFuruya, Hisashi
_9781077
245 0 _aSimulation of Degradation of Dielectric Breakdown Field of Thermal Sio2 Films Due to Voids Si Wafers
300 _a398-304 p.
650 _aCrystal Growth
_995418
650 _aDielectric Breakdown
_9742641
650 _aVoids
_9174888
773 _d2000
_tIEEE Transactions on Electron Devices
_x00189383
942 _cART
_o51
_pABUL KALAM Library
999 _c745490
_d745490