000 | 00574nab a2200169Ia 4500 | ||
---|---|---|---|
008 | 230808s2000 |||||||f |||| 00| 0 eng d | ||
100 |
_aSatoh, Yuhki _9781074 |
||
100 |
_aShiota, Takaaki _9781075 |
||
100 |
_aFuruya, Hisashi _9781077 |
||
245 | 0 | _aSimulation of Degradation of Dielectric Breakdown Field of Thermal Sio2 Films Due to Voids Si Wafers | |
300 | _a398-304 p. | ||
650 |
_aCrystal Growth _995418 |
||
650 |
_aDielectric Breakdown _9742641 |
||
650 |
_aVoids _9174888 |
||
773 |
_d2000 _tIEEE Transactions on Electron Devices _x00189383 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c745490 _d745490 |