000 | 00559nab a2200157Ia 4500 | ||
---|---|---|---|
008 | 230808s1998 |||||||f |||| 00| 0 eng d | ||
100 |
_aGiust, G. K. _9780643 |
||
100 |
_aSigmon, T. W. _9780645 |
||
245 | 0 | _aHigh-Performance Thin-Film Transistors Fabricated Using Excimer Laser Processing and Grain Engineering | |
300 | _a925-932 p. | ||
650 |
_aExcimer Laser Annealing _9780646 |
||
650 |
_aFloating Body Effects _9768145 |
||
650 |
_aFuli Melt Threshold _9780648 |
||
773 |
_d1998 _tIEEE Transactions on Electron Devices _x00189383 |
||
942 |
_cART _o51 _pABUL KALAM Library |
||
999 |
_c745303 _d745303 |