| 000 | 00576nab a2200169Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1998 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aHoriuchi, M _9775985 |
||
| 100 |
_aTeshima, Kszuya _9777396 |
||
| 100 |
_aYamaguchi, Ken _9768844 |
||
| 245 | 0 | _aHigh-Current Smali-Parasitic-Capacitance Mosfet on a Poly-Si Interlayed (Psi-)Soi Wafer | |
| 300 | _a1111-1115 p. | ||
| 650 |
_aPoly-Si Tft _9777397 |
||
| 650 |
_aSoi Mosfet _9716592 |
||
| 650 |
_aSubthreshold-Turn-Off Properties _9777398 |
||
| 773 |
_d1998 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c743931 _d743931 |
||