| 000 | 00683nab a2200181Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1998 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aIwai, Taisuke _9777006 |
||
| 100 |
_aOhara, S _9777008 |
||
| 100 |
_aYamada, Hiroshi _9715592 |
||
| 100 |
_aYamaguchi, Y _9777010 |
||
| 245 | 0 | _aHigh Efficiency and High linearity Ingap/Gaas Hbt Power Amplifiers Matching Techniques of Source and Load Impedance to Improve Phase Distortion and linearity | |
| 300 | _a1196-1200 p. | ||
| 650 |
_aAdjacent Channel Leakage Power _9777011 |
||
| 650 |
_alinearity _9770779 |
||
| 650 |
_aPhase Distribution _9777013 |
||
| 773 |
_d1998 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c743792 _d743792 |
||