| 000 | 00553nab a2200169Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1998 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aEimori, Takahisa _9776010 |
||
| 100 |
_aOashi, Toshiyuki _9776011 |
||
| 100 |
_aMorishita, Fukashi _9776012 |
||
| 245 | 0 | _aApproaches to Extra Low Voltage Dram Operation by Soi-Dram | |
| 300 | _a1000-1009 p. | ||
| 650 |
_aDram _9757956 |
||
| 650 |
_aHigh-Speed Circuits _9776015 |
||
| 650 |
_aSilicon-on-Insulator (Soi) _9776017 |
||
| 773 |
_d1998 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c743394 _d743394 |
||