| 000 | 00575nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2000 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aCheng, Zhi-Uuan _9771952 |
||
| 100 |
_aling, C. H. _9771953 |
||
| 245 | 2 | _aA Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet | |
| 300 | _a97-102 p. | ||
| 650 |
_aCarrier Generation lifetime _9771954 |
||
| 650 |
_aFuliy-Depleted Soi Mosfet _9771955 |
||
| 650 |
_aRecombination lifetime _9771956 |
||
| 773 |
_d2000 _tIEEE Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c741694 _d741694 |
||