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IEEE Transactions on Nanotechnology
Material type:
Continuing resourceLanguage: English Analytics: Show analyticsPublication details: Piscataway, NJ, U.S.A : Institute of Electrical and Electronics EngineersISSN: - 1536125X
- 621
| Item type | Current library | Collection | Shelving location | Call number | Vol info | Status | Notes | Date due | Barcode |
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.03, No.04 (Dec. 2004) | Not For Loan | Quarterly | S11108 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.03, No.03 (Sep. 2004) | Not For Loan | Quarterly | S10843 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.03, No.02 (Jun. 2004) | Not For Loan | Quarterly | S10608 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.03, No.01 (Mar. 2004) | Not For Loan | Quarterly | S10519 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.02, No.04 (Dec. 2003) | Not For Loan | Quarterly | S12657 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.02, No.03 (Sep. 2003) | Not For Loan | Quarterly | S8313 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.02, No.02 (Jun. 2003) | Not For Loan | Quarterly | S8328 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.02, No.01 (Mar. 2003) | Not For Loan | Quarterly | S8332 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.01, No.04 (Dec. 2002) | Not For Loan | Quarterly | S5189 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.01, No.03 (Sep. 2002) | Not For Loan | Quarterly | S4993 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.01, No.02 (Jun. 2002) | Not For Loan | Quarterly | S4961 | ||
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Serials Collection
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Periodical Section | Department of Electrical Engineering | Periodical Section | Vol.01, No.01 (Mar. 2002) | Not For Loan | Quarterly | S2551 |
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Low-Temperature Electronic Properties of Electrospun Pan-Derived Carbon Nanofiber by
Source: Ieee Transactions on Nanotechnology
Material type:  Article; Format:
print
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Transfer of Single Crystalline Silicon Nanolayer onto Alien Substrate by
Source: Ieee Transactions on Nanotechnology
Material type: Article; Format:
print
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De for mations and Thermal Stability of Carbon Nanotube Ropes by
Source: Ieee Transactions on Nanotechnology
Material type: Article; Format:
print
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Single Electron Encoded Latches and Flip-Flops by
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Material type: Article; Format:
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Spilt Currennt Quantum-Dot Cellular Automata-Modeling and Simulation by
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Material type: Article; Format:
print
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Hybrid Protein-Polymer Biomimetric Membrane by
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A Nanoscale Memory and Transistor Using Backside Trapping by
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Electro-Refraction in Quantum Dots: Dependence on Lateral Size and Shape by
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Material type: Article; Format:
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Surface Morphology and Photoluminence of Inas Quantum Dots Grown on [110]-Oriented Streaked Islands Under Ultra-Low V/Iii Ratio by
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Electrostatics of Partially Gated Carbon Nanotube Fets by
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Mos-Junction-Based Nanostructures By Thermal Oxidation of Silicon Wires for Hydrogen Detection by
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Fiber-Optic Nanorefractometer Based on one-Dimensional Photonic-Bandgap Structures with Two Defects by
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Coherent Charge Osillation in A Semiconductor Double Quantum Dot by
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Electron Transport Through Metal-Multiwall Carbon Nanotube Interfaces by
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Dynamic Dipole -Dipole Inetractions Between Excitons in Quantum Dots of Different Sizes by
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Material type: Article; Format:
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Ultrashort Sonos Memories by
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Curvilinear Lattice in Chiral Carbon Nanotubes by
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Testing of Quantum Cellular Automata by
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A Method of Majority Logic Reduction for Quantum Cellular Automata by
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ModelingNanoindentation of Elastoplastic Materials with Nonlinear Adaptive Springs (Nass) by
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Electrical-Bridge Model onSelf-Organized Growth of Nanopores in Anodized Aluminum Oxide by
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Three-Dimensional Nanostructuring with Femtosecond Laser Pulses by
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Nanocomposite Organic Films Silicon by
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A Technique for Producing Ordered Arrays of Metallic Nanoclusters By Electroless Deposition in Focused Ion Beam Patterns by
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Material type: Article; Format:
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Threshold Voltage Calculation in Ultrathin-Film Soi Mosfets UsingEffective Potential by
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Simulating Quantum Transport in Nanoscale Mosfets : Ballistic Hole Transport , Subband Engineering and Boundary Conditions by
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Controlled Single-Electron Effects in Nonoverlapped Ultra-Short Silicon Field Effect Transistors by
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A Multinanodot Floating-Gate Mosfet Circuit for Spiking Neuron Models by
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Material type: Article; Format:
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Stochastic Assembly of Sublithographic Nanoscale Interfaces by
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Material type: Article; Format:
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Electrostatics of Coaxial Schottky-Barrier Nanotube Field-Effect Transistors by
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Material type: Article; Format:
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Bipolar Conduction and Drain-Induced Barrier Thinning in Carbon Nanotube Fets by
Source: Ieee Transactions on Nanotechnology
Material type: Article; Format:
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Failure Analysis Requirements for Nanoelectronics by
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Fabrication and Optical Characterization of Template-Constructed Thin Films with Chiral Nanostructure by
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Luttinger Liquid Theory As A Model ofGigahertz Electrical Properties of Carbon Nanotubes by
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Current-Voltage Characteristics of Molecular Conductors: Two Versus Three Terminal by
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Digital Switching InQuantum Domain by
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Single Electron Transistor Basd on Gate -Induced Si Island for Single Electron Logic Application by
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Subsurface Dopant Induced Features onSi(100) Fundamental Study Aned Application by
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Carbon NanotubeElectronics by
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Intrinsic Fluctuation in Sub 10-Nm Double Gate Mosfet Introduced By Distcrete of Vcharge and Matter by
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A System Architecture Solution for Unreliable Nanoelectronic Devices by
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Nanocomputing By Field -Couplked Nanomagnets by
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Efects of Oxidation Process by
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Ac and Ddc Characteristic Sof Sub -50 Modsfet by
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A Practical Spice Model Based onPhysic and Characteristics of Realistic Single-Electron Transistors by
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Electrical Characteristics of Finfet with Vertically Non Uni for m by
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Modeling of Quantum Effects of Ultrathin Oxide Mos Stsructure with An Effective Potewntial by
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A Spice Compatible Model to 10 of Nm By Decoupling of Storage by
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Scaling of Flash Nvram to 10 of Nm By Decoupling of Storage from Read/Sense Using Back Floating Gates by
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Ballistic Fet Modeling Using Qdame: Quantum Devicesanalysis By Modal Evaluation by
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Breakdown of Universal Mobility Curves in Sub-100 Nm Mosfets by
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Binary Adders of Multigate Single-Electron Transistors: Specific Design Using Pass-Transistor Logic by
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Nanocell Logic Gates for Molecular Computing by
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Fast Interface Characterization of Tunnel Oxide Mos Structures by
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Photonic Crystals for Confining, Guiding, and Emitting Light by
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ScanningControls: Genomics and Nanotechnology by
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Semiconductor Spintronics by
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The Science and Technology of Magnetoresistive Tunneling Memory by
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The "Millipede" Nanotechnology Entering Data Storage by
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Nanotechnology Goals and Challenges for Electronic Applications by
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Devices Modeling and Simulations toward Sub-10 Mm Semiconductor Devices by
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Nanocrystal Nonvolatile Memory Devices by
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Single-Walled Carbon NanotubeElectronics by
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MolecularElectronics ByNumbers by
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