Results of search for 'su:"Mosfets"' › Engr Abul Kalam Library catalog

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		Low-Voltage Tunable Reciprocal Circuit Using Fgmos Technique by Gupta, Maneesha Pandey, Rishikesh Source: Journal of Active and Passive Electronic Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fgmos Based Low-Voltage Tunable Floating Resistor by Gupta, Maneesha Pandey, Rishikesh Source: Journal of Active and Passive Electronic Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Study of Short Channel Effects in Fuliy Depleted Double Gate and Cylindrical Gate Mosfets by Aouaj, Abdeliah Source: Journal of Active and Passive Electronic Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Analytical Model of Subthreshold Swing for Cylindrical Gate (Cg) Mosfets Including Effective Conducting Path (Ecp) by Aouaj, Abdeliah Source: Journal of Active and Passive Electronic Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effects OfInversion-Layer Centroid onPerformance of Double-Gate Mosfet'S by Lopez-Vilianueva, A Gamiz, Francisco Palma, Alberto J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Mosfet Channel Length Extraction and Interpretion by Taur, Yuan Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Mos Transistor Modeling for Rf Ic Design by Enz, Christian C Cheng, Yuhua Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		ExplainingDependences OfHole and Electron Mobilities in Si Inversion Layers by Pirovano, Agostino Lacaita, andrea L Oberhuber, Ralph Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Suppression of Parasitic Bipolar Action in Ultra-Thin-Film Fuliy-Depleted Cmos/Simox Devices by Ar-Ion Implantation Into Source/Drain Regions by Ohno, T Takahashi, M Tsuchiya, T Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Self-Aligned Control of Threshold Voltages in Sub-0.2- Mosfet'S by Kurata, Hajime SugII, Toshihiro Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Matching Analysis of Deposition Defined 50-Nm Mosfet'S by Horstmann, John T Goser, Karl F Hilieringmann, Ulrich Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Parasitic Bipolar Gain Reduction andOptimization of 0.25 Partialiy Depleted Soi Mosfet'S by Mistry, Kaizad R Sleight, Jeffrey W Flatley, Robert Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Three Mechanisms Determining Short-Channel Effects in Fuliy-Depleted Soi Mosfet'S by Tsuchiya, Toshiaki Sato, Yasuhiro Tomizawa, Masaaki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Parasitic Capcitance of Submicrometer Mosfet'S by Suzuki, Kunihiro Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Interface Trap Generation by Fn Injection Under Dynamic Oxide Field Stress by Chen, T.P Lo, K. F li, Stelia Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Unified Model for Self-limiting Hot-Carrier Degradation in Ldd N-Mosfet'S by Ang, D. S ling, C. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Measurement of Mosfet Substrate Dopant Profile Via Inversion Layer-To-Substrate Capacitance by Hsu, C. H Chiang, Charles Yu-Teh Yeow, Yew Tong Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Modified Lucky Electron Model for Impact Ionization Rate in Nmosfet'S at 77 K by ling, C. H See, lin Ming Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis OfMos Transistor Based onSelf-Consistent Solution ToSchrodinger and Poisson Equations and onLocal Mobility Model by Janik, Tomasz Majkusiak, Bogdan Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Bias Temperature Instability in Scaled P+ Polysilicon Gate P-Mosfet'S by Yamamoto, Toyoji Uwasawa, Ken Ichi Mogai, Tohru Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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