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		Silicon Heterostructure Handbook Materials Fabrication Devices Circuits and Applications of Sige and Si Strained Layer Epitaxy by Cressler, John D [editor] Material type: Text Language: English Publication details: Boca Raton : Crc/Taylor and Francis, c2006 Online access: Table of Contents Availability: Items available for loan: Reference Section (2)Location, call number: Reference Section 661.8802 SIL, ...
		Silicon Heterostructure Devices by Cressler, John D [editor] Material type: Text Language: English Publication details: Boca Raton : CRC Press, c2008 Online access: Table of Contents Availability: Items available for loan: Circulation Section (1)Location, call number: Circulation Section 621.381528 CRE.
		Transistor Noise in Sige Hbt Rf Technology by Niu, Guofu Cressler, John D Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Channel Resistance Derivtive Method for Effective Channel Length Extraction in Lddmosfet'S by Niu, Guofu Cressler, John D Mathew, Suraj J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Optimization of Sige Hbt'S for Operation at High Current Densities by Joseph, Alvin J Cressler, John D Niu, Guofu Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Quantify Neutral Base Recombination andEffects of Coliector Junction Traps in Uhv/Cvd Sige Hbt'S by Niu, Guofu Cressler, John D Joseph, Alvin J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Tpta; Resostance Slope-Based Effective Channel Mobility Extraction Method for Deep Submicrometer Cmos Technology by Niu, Guofu Cressler, John D Mathew, Suraj J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onConsistent Modeling of Band-Gap Narrowing for Accurate Device-Level Simulation of Scaled Sige Hbts by Shi, Yun Cressler, John D Niu, Guofu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Physics-Based High-Injection Transit-Time Model Applied to Barrier Effects in Sige Hbts by Liang, Q Cressler, John D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Sige Biplar Transistor. by Cressler, John D Source: Ieee Spectrum Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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