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Enhanced Hydrogen Generation from Methanol Aqueous Solutions Over Pt/Moo3/Tio2 Under Ultraviolet light by
  • Ma, Bao Jun
Source: International Journal of Hydrogen Energy
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Peculiarities of Axial and Radial Ge-Si Heterojunction in Nanowires: Monte Carlo Simulation by
  • Shwartz, Nataliya L
  • Nastovjak, Alia G
Source: Pure and Applied Chemistry (International Journal of)
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Nanostructured Bilayered Thin Films in Photoelectrochemical Water Splitting - a Review by
  • Upadhyay, Sumant
  • Choudhary, Surbhi
Source: International Journal of Hydrogen Energy
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Cu2o/Cu/Tio2 Nanotube Ohmic Heterojunction Arrays with Enhanced Photocatalytic Hydrogen Production Activity by
  • li, Zhonghua
  • liu, Jiawen
Source: International Journal of Hydrogen Energy
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Zno/Cuins2 Core/Sheli Heterojunction Nanoarray for Photoelectrochemical Water Splitting by
  • liu, Zhifeng
  • liu, Zhichao
Source: International Journal of Hydrogen Energy
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Low-Frequency Noise of Inp/Ingaas Heterojunction Bipolar Transistors by
  • Takanashi, Yoshifumi
  • Fukano, H
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Analysis of Si Ge Heterojunction Integrated Injection Logi (I2l) Structures Using a Stored Stored Charge Model by
  • Wainwright, Simon P
  • Hali, Stephen
  • Ashburn, Peter
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Optimization of A-Si H-Based Three-Terminal Three-Color Detectors by
  • Topic, Marko
  • Stiebig, Helmut
  • Knipp, Dietmar
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Room Temperature Photocurrent Spectroscopy of Sige/Si Photodiodes Grown by Selective Epitaxy by
  • Vonsovici, Adrian
  • Vescan, lili
  • Koster, Alain
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
on Electron Transport Across Interfaces Connecting Materials with Different Effective Masses by
  • Grinberg, Anatoly A
  • Luryi, Serge
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Ultra-Low-Power and High-Speed Sige Base Bipolar Transistors for Wireless Telecommunication Systems by
  • Kondo, Masao
  • Oda, Katsuya
  • Shimamoto, Hiromi
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Selective-Epitaxial-Growth Shge-Base Base Hbt with Smi Electrodes Featuring 9.3-Ps Ecl-Gate Delay by
  • Washio, K
  • Oda, Katsuya
  • Tanabe, Masamichi
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Pure Analytic Method for Direct Extraction of Collector -Up Hbts Small-Signal Parameters by
  • Tseng, Hssien-Cheng
  • Chou, Jung-Hua
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Thermal Resistance of Metamorphic Inp-Based Hbtson Gaas Substrates Using A Linearly Graded in Ga-P Metamorphic Buffer by
  • Yang, H
  • Wang, Hong
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Direct Extraction of An Empirical Temperature Dependent Ingap-Gaaz Hbt Large-Signal Model by
  • Raghavan, Arvind
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
An Ingap-Gaas Hbt Mmic Smart Power Amplifier for W-Cdma Mobile Handsants by
  • Kim, Joon Hyung
  • Kim, Ji Hoon
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/Sige Hbts by
  • Borgarini, Matia
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Significant Operating Voltage Reduction on High-Speed Gaas-Based Heterojunction Bipolar Using A Low Band Gap Ingaasn Base Layer by
  • Monier, C
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Inp D-Hbt Ics for 40-Gb/S and Higher Bitrate Lightwave Tranceivers by
  • Baeyens, Yves
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Optical Response ofA1/A-Sic/C-Si(P)/Au Heterojunction Structure by
  • Magafas, L
Source: Microelectronics Journal
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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