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ModelingFringing Electric Field Effect onThreshold Voltage of Fd Soi Nmos Devices withLdd/Sidewall Oxide Spacer Structure by
  • Lin, L-F
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A 0.8-V 128-Kb Four-Way Set-Associarive Two-Level Cmos Cache Memory Using Two -Stage Wordline/Bitline-Oriented Tag-Campare (Wlotc/Blotc) Scheme by
  • Lin, L-F
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Qos-Provisioning Neural Fuzzy Connection Admission Controller for Multimedia High -Speed Networks by
  • Cheng, R-G
  • Chang, C-J
  • Lin, L-F
Source: Ieee/Acm Transactions on Networking
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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