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		Ultra-Low-Power and High-Speed Sige Base Bipolar Transistors for Wireless Telecommunication Systems by Kondo, Masao Oda, Katsuya Shimamoto, Hiromi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Selective-Epitaxial-Growth Shge-Base Base Hbt with Smi Electrodes Featuring 9.3-Ps Ecl-Gate Delay by Washio, K Oda, Katsuya Tanabe, Masamichi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Performance Self-Aligned Sigec Hibt with Selectively Grown Si Base By Uhv/Cvd by Oda, Katsuya Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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